Development of Industry’s Highest Capacity Compact HDD by TOSHIBA
Toshiba today unveiled yet again another small form factor hard disk drives targeted for enterprise applications. The new high performance, low power HDD is a new MBF2600RC family of HDDs bringing 2.5-inch drives into the enterprise space. The new product line-up features a 600GB drive and rounds out the range with 300GB, and 450GB capacities with maximum rotation speeds of over 10,000RPM. The highest areal density of 595Mbit/mm2 (384Gbpsi) and 600GB capacity on these new 2.5-inch HDDs has been achieved through improvements in both the magnetic recording head and disk’s magnetic layer. Furthermore, the internal transfer rate has been increased by 13% from 191.5MB/s to 216MB/s; thanks to improved linear recording density and overall performances through high speed seek time. Read more
Development of a Mask Pattern Optimizing Technology for Improving Accuracy of Lithography for LSIs
Currently, the accuracy of the resolution and critical dimension (CD) of the main circuit patterns in mask pattering are enhanced through application of a sub pattern, the Sub Resolution Assist Feature (SRAF), which modulates printed images of the main pattern.
Today’s lithography employs ArF laser sources through application of high resolution technologies, which includes a phase shifting mask employing light phase modulation and immersion lithography that uses water to increase the refractive index. The ArF laser technique has extended the lithography to the 30-nanometer generation. Read more
Development of a Breakthrough Technology for Achieving Low Voltage Operation in System LSI by TOSHIBA
System LSI constitute the core components of digital products, where their operation voltage has a major impact on an overall power consumption of a product. However, up to now, voltage scaling of cutting edge system LSI has presented a big technological challenge due to loss of stability in memory function of its embedded SRAM which occurs at low voltage. The smaller size of the memory cell transistor of SRAM makes SRAM susceptible to transistor variability at low voltage in comparison to other logic circuits. In order to overcome this issue, Toshiba has developed a SRAM circuit technique which results in a low voltage operation in system LSI, paving the way in reduced power consumption in digital products. Read more
Introduction of New NAND-Flash-Based SSD drives by TOSHIBA
Toshiba made an announcement on expanding its lineup of NAND flash based SSD (Solid State Drives) manufactured based on Toshiba’s 32nm Multi-Level-Cell NAND flash memories. the new drives includes the industry’s first 128-gigabyte (GB) Half-Slim/mSATA SG Series SSD modules targeted to be use for various applications including mini-mobile and netbook PCs, as well as the HG Series capable of delivering high level performance and endurance required for netbook computers, gaming devices and home entertainment systems. Read more
Panasonic Showcases the World’s Largest Full HD 3D Plasma TV
3D TVs seems to be the trend for 2010 and Panasonic along with Sony and Toshiba reaffirming this by introduction of array of display and recording products as well as enabling component devices all in an effort in bringing 3D to your home. Panasonic announcement on development of its 152-Inch Full, world’s largest follows company’s development of yet another industry’s first 103-inch Class size Full HD 3D PDP back in 2008 as well as company’s home theater size 50-inch Class Full HD 3D PDP in 2009. The new gigantic 4k x 2k Quadruple Full HD plasma panel is capable of creating a Full HD 3D world. Read more
Development of Industry’s Highest Capacity Embedded NAND Flash Memory Modules by TOSHIBA
Toshiba made an announcement on development and launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity in the industry. The chip is in full compliance with e-MMC(TM) standard, targeted for various digital consumer products such as smart phones, mobile phones, netbooks and digital video cameras. The new chip combines sixteen 32Gbit (equal to 4GB) NAND chips and dedicated controller thanks to Toshiba’s 32nm process technology which includes application of chip thinning and layering technologies in achieving a thickness of only 30 micrometers for each individual chip. Toshiba is the first company in succeeding to combine 16 NAND chips. Read more
Development of Spintronics based MOSFET an Advance Semiconductor technology by TOSHIBA
On-going advancement in MOS field-effect transistor (MOSFET) devices as the result of continuing miniaturization of devices will inevitably hit its limit in view of such issues as performance degradation due to increase in resistance of global wiring and increase in power consumption caused by current leakage. In overcoming this issue spintronics has been considered as an ideal candidate among potential solutions in solving this issue, however the application of spintronics in transistors is at its early stage and it has been partially proved. Read more
Development of World’s First Practical technology for 20nm Generation LSI by TOSHIBA
Truly a significant development in the world of LSI, with the announcement of Toshiba that its has developed a groundbreaking technology for steep channel impurity distribution, a solution to a key problem for 20nm generation CMOS technology, a technology which paves the way to a future generation of LSI which fabricated with bulk CMOS technology which is the mainstream technology in today’s LSI. Through utilization of this technology three layers are being formed on the surface of the channel namely epitaxial silicon (Si), carbon-doped silicon (Si:C) as well as boron-doped Si:C, where the top epitaxial Si layer functions as a low resistance path for the electrons and the holes, the middle SI:C layer functions as a defensive layer in preventing impurity diffusion and the bottom layer boron-doped Si:C layer is responsible for suppressing the fixed charge which is caused b the Si:C layer formation. Read more
Development of a High Resolution Photo-Sensetive film for EUV lithography by TOSHIBA
With advancement of semiconductor technology as well as increase in wiring density use of the conventional polymer photoresists which is the base materials for conventional semiconductor resist will face some difficulties. With current scaling down of circuit pattern at the 20nm-scale generation the present photoresits will not be capable of resolving circuit patterns precisely resulting in roughness in pattern sidewalls, this is mostly due to the fact that the conventional photoresists consists of polymer compounds. Although, such compounds are easier to spin-cast on wafers, the size of their molecules and entangling of their molecular chains limit resolution. In response to overcome this issue, Toshiba has developed a photoresists with smaller molecular compounds for EUV (Extreme UltraViolet) generation by using derivative of truxene, a low molecular material with a finer and more durable characteristic than currently used polymer materials. Read more
Development of Industry’s Largest Capacity 1.8-inch class HDD by TOSHIBA
Toshiba once again is breaking its own record by introducing yet again the largest capacity in 1.8-inch type HDD, a record breaking 320GB with 16MB of buffer memory and improved transfer rate for supporting high-speed processing of large data volumes. He new HDD is designed to fit into the PCs and portable external hard disk drive. The improvement in capacity has been largely due to improvement in perpendicular magnetic recording head and disk’s magnetic layer resulted in an increase of an areal density of 801 Mbit/mm2 (516Gbpsi) which happen to be the industry’s highest for 1.8 inch class of HDD. Read more
