Release of World’s highest Power-Added Efficiency rating GaN HEMT Amplifier for C-band Satellites by Mitsubishi Electric
May 30, 2011 · Filed Under Trendy Products · Comments Off
Mitsubishi Electric has announced the development of industry’s highest power-added efficiency (PAE) rating GaN HEMT (gallium nitride high-electron mobility transistor). The new amplifier achieved a PAE rating of 67%, a 7 point notch higher than commercially available amplifiers. The company expects the development of the new amplifier will pave the way compact, lighter and power efficient microwave communication satellites. The improvement in PAE rating was a result of improving second harmonic impedance of GaN HEMT through highly accurate input control. Read more
